pzt4401 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 0.6 a collector-base voltage v (br)cbo: 60 v operating and storage j unction temperature range t j, t stg: -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic=1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 50 na emitter cut-off current i ebo v eb =6v,i c =0 50 na h fe(1) v ce =1v,i c =0.1ma 20 h fe(2) v ce =1v,i c =1ma 40 h fe(3) v ce =1v,i c =10ma 80 h fe(4) v ce =1v,i c =150ma 100 300 dc current gain h fe(5) v ce =2v,i c =500ma 40 v ce(sat) i c =150ma,i b =15ma 0.4 v collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 0.75 v v be(sat) i c =150ma,i b =15ma 0.95 v base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 1.2 v transition frequency f t v ce =10v,i c =20ma,f=100mhz 200 mhz collector capacitance c c v cb =5v,i e =0,f=1mhz 8 pf emitter capacitance c e v eb =0.5v,i c =0,f=1mhz 30 pf delay time t d 15 ns rise time t r 20 ns storage time t s 200 ns fall time t f v cc =29.5v, i c =150ma v bb =3.5v,i b1 =- i b2 =15ma 60 ns SOT-223 1. base 2. collector 3. emitter pzt4401 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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